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IRFG6110 の電気的特性と機能

IRFG6110のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFG6110
部品説明 POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFG6110 Datasheet, IRFG6110 PDF,ピン配置, 機能
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PD - 90436F
IRFG6110
JANTX2N7336
JANTXV2N7336
REF:MIL-PRF-19500/598
POWER MOSFET
100V, Combination 2N-2P-CHANNEL
THRU-HOLE (MO-036AB)
HEXFET® MOSFETTECHNOLOGY
Product Summary
Part Number
IRFG6110
IRFG6110
RDS(on)
0.7
1.4
ID CHANNEL
1.0A
N
-0.75A
P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
N-Channel
P-Channel Units
1.0 -0.75
0.6 -0.5 A
4.0 -3.0
1.4 1.4 W
0.011
0.011
W/°C
±20 ±20 V
75
75
mJ
— —A
— — mJ
5.5
-5.5
-55 to 150
V/ns
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/16/02

1 Page





IRFG6110 pdf, ピン配列
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IRFG6110
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Min
-100
-2.0
0.67
Typ Max Units
——
V
-0.098 — V/°C
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
— 1.4
— 1.73
— -4.0 V
— — S( )
VGS = -10V, ID = -0.5A
VGS = -10V, ID =- 0.75A
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -0.5A
— -25
— -250 µA
— -100
— 100
nA
VDS= -80V, VGS= 0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = - 20V
VGS = 20V
— 15
VGS = -10V, ID = -0.75A,
— 7.0 nC
— 8.0
VDS = -50V
— 30
— 60
ns
VDD = -50V, ID = -0.75A,
VGS = -10V, RG = 7.5
— 40
— 40
10 —
nH Measured from drain lead (6mm/
0.25in. from package. ) to source
lead (6mm/0.25in. from package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 200 —
— 85 — pF
— 30 —
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — -0.75
ISM Pulse Source Current (Body Diode)
— — -3.0 A
VSD Diode Forward Voltage
— — -5.5 V
Tj = 25°C, IS = -0.75A, VGS = 0V
trr Reverse Recovery Time
— — 200 nS Tj = 25°C, IF = -0.75A, di/dt -100A/µs
QRR Reverse Recovery Charge
— — 9.0 nC
VDD -50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 17 °C/W
— — 90
Test Conditions
Typical socket mount
For footnotes refer to the last page
www.irf.com
3


3Pages


IRFG6110 電子部品, 半導体
www.DataSheet4U.com
IRFG6110
N-Channel
Q1,Q3
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6 www.irf.com

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部品番号部品説明メーカ
IRFG6110

POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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