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RF3133 の電気的特性と機能

RF3133のメーカーはRF Monolithicsです、この部品の機能は「QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE」です。


製品の詳細 ( Datasheet PDF )

部品番号 RF3133
部品説明 QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
メーカ RF Monolithics
ロゴ RF Monolithics ロゴ 




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RF3133 Datasheet, RF3133 PDF,ピン配置, 機能
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0
Typical Applications
• 3V Quad-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
RF3133
QUAD-BAND GSM850/GSM/DCS/PCS
POWER AMP MODULE
• GSM850, EGSM900, DCS/PCS Products
• GPRS Class 12 Compatible
Product Description
The RF3133 is a high-power, high-efficiency power ampli-
fier module with integrated power control. The device is
self-contained with 50input and output terminals. The
power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power
control ASICs and other power control circuitry; this
allows the module to be driven directly from the DAC out-
put. The device is designed for use as the final RF ampli-
fier in GSM850, EGSM900, DCS and PCS handheld
digital cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to
1785MHz, and 1850MHz to 1910MHz bands. On-board
power control provides over 37dB of control range with an
analog voltage input; and, power down with a logic “low”
for standby operation.
1
10.00
± 0.10
7.00
± 0.10
NOTES:
1 Shaded areas represent pin 1 location.
1.40
1.25
0.450
± 0.075
9.90 TYP
9.10 TYP
8.50
6.90 TYP
6.10 TYP
3.90 TYP
3.10 TYP
1.50
0.90 TYP
0.10 TYP
0.00
1
8.40 TYP
7.60 TYP
6.00
5.40 TYP
4.60 TYP
4.00
2.40 TYP
1.60 TYP
Optimum Technology Matching® Applied
Si BJT
!GaAs HBT
GaAs MESFET
Si Bi-CMOS
!SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
DCS IN 1
BAND SELECT 2
TX ENABLE 3
VBATT 4
VREG 5
VRAMP 6
GSM IN 7
12
8
11 DCS OUT
10 VCC OUT
9 GSM OUT
Functional Block Diagram
Package Style: Module
Features
• Complete Power Control Solution
• Single 2.9V to 5.5V Supply Voltage
• +35dBm GSM Output Power at 3.5V
• +33dBm DCS/PCS Output Power at 3.5V
• 55% GSM and 52% DCS/PCS ηEFF
Ordering Information
RF3133
RF3133 PCBA
Quad-Band GSM850/GSM/DCS/PCS Power Amp
Module
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 030527
2-459

1 Page





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RF3133
Parameter
Specification
Min.
Typ.
Max.
Overall (GSM850 Mode)
Operating Frequency Range
Maximum Output Power
Total Current
Total Efficiency
Input Power Range
Output Noise Power
+33.8
+31.5
40
0
Forward Isolation 1
Forward Isolation 2
Cross Band Isolation at 2fO
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
8:1
Output Load VSWR Ruggedness 10:1
824 to 849
+35.0
+32.5
1.3
50
+2
-86
-87
-18
-18
-28
50
+5
-82
-83
-30
-2
-13
-5
-15
-36
2.5:1
Output Load Impedance
Note: VRAMP Max=3/8*VBATT+0.18<1.5V
50
Unit
MHz
dBm
dBm
A
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Condition
Temp=+25 °C, VBATT=3.5V, PIN=+2dBm,
VREG=2.8V, VRAMP=VRAMP MAX,
Freq=824MHz to 849MHz, 25% Duty Cycle,
Pulse Width=1154µs
Temp = 25°C, VBATT=3.5V,
VRAMP=VRAMP MAX
Temp=+85 °C, VBATT=3.0V,
VRAMP=VRAMP MAX
POUT = +31 dBm
At POUT MAX, VBATT=3.5V
Full output power guaranteed at minimum
drive level
RBW=100kHz, 869MHz to 879MHz,
POUT > +5dBm
RBW=100kHz, 879MHz to 894MHz,
POUT > +5dBm
TXEnable=Low, 0V, PIN=+5dBm
TXEnable=High, PIN=+5dBm, VRAMP=0.2V
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
VRAMP=0.2V to VRAMP MAX
Spurious<-36dBm, RBW=3MHz, Set VRAMP
where POUT <34.0dBm into 50load
Set VRAMP where POUT <34.0dBm into 50
load. No damage or permanent degradation
to part.
Load impedance presented at RF OUT pad
Rev A4 030527
2-461


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RF3133 電子部品, 半導体
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RF3133
Pin
1
2
3
4
5
6
7
8
9
10
11
12
Pkg
Base
Function Description
DCS/PCS IN RF input to the DCS band. This is a 50input.
BAND
SELECT
Allows external control to select the GSM or DCS band with a logic high
or low. A logic low enables the GSM band whereas a logic high enables
the DCS band.
TX ENABLE This signal enables the PA module for operation with a logic high. Once
TX Enable is asserted the RF output level will increase to -2dBm.
VBATT
Power supply for the module. This should be connected to the battery.
VREG
Regulated voltage input for power control function. (2.8V nom)
VRAMP
Ramping signal from DAC. A simple RC filter may need to be con-
nected between the DAC output and the VRAMP input depending on
the baseband selected.
GSM IN RF input to the GSM band. This is a 50input.
VCC2
Controlled voltage input to driver stage for GSM bands. This voltage is
part of the power control function for the module. This node must be
connected to VCC out.
GSM OUT RF output for the GSM band. This is a 50output. The output load line
matching is contained internal to the package.
VCC OUT
Controlled voltage output to feed VCC2. This voltage is part of the
power control function for the module. It can not be connected to any-
thing other than VCC2, nor can any component be placed on this node
(i.e., decoupling capacitor).
DCS/PCS
OUT
RF output for the DCS band. This is a 50output. The output load line
matching is contained internal to the package.
VCC2
Controlled voltage input to DCS driver stage. This voltage is part of the
power control function for the module. This node must be connected to
VCC out.
GND
Interface Schematic
2-464
Rev A4 030527

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QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE

RF Monolithics
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