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PDF IXGH12N100U1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH12N100U1 | |
| Descripción | Low VCE(sat) IGBT | |
| Fabricantes | IXYS Corporation | |
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Low VCE(sat) IGBT with Diode
High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1
IXGH 12N100AU1
VCES
I VC25 CE(sat)
1000 V 24 A 3.5 V
1000 V 24 A 4.0 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
I
C25
I
C90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 150 W
Clamped inductive load, L = 300 mH
PC TC = 25°C
TJ
TJM
Tstg
Md
Weight
Mounting torque with screw M3
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
1000
V
V
±20 V
±30 V
24 A
12 A
48 A
ICM = 24
@ 0.8 VCES
100
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVCES
VGE(th)
IC = 3 mA, VGE = 0 V
BVCEStemperature coefficient
IC = 500 mA, VGE = VGE
VGE(th) temperature coefficient
1000
0.072
2.5
-0.192
V
%/K
5.5 V
%/K
ICES VCE = 0.8, VCES
VGE= 0 V
TJ = 25°C
TJ = 125°C
300 mA
5 mA
IGES VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
IC = ICE90, VGE = 15
12N100U1
12N100AU1
3.5 V
4.0 V
TO-247AD
G
CE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages
JEDEC TO-247
• IGBT with antiparallel FRED in one
package
• HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
• DC choppers
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• Space savings (two devices in one
package)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95596C (7/00)
1-5
1 page  
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IXGH12N100U1
IXGH12N100AU1
Fig. 12. Forward current versus
voltage drop.
Fig. 13. Recovery charge versus -diF/dt.
Fig. 14. Peak reverse current versus
-di /dt.
F
Fig. 15. Dynamic parameters versus
junction temperature.
Fig. 16. Reverse recovery time .
versus -diF/dt
Fig. 17. Forward voltage recovery and
time versus -diF/dt.
Fig. 18. Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5-5
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