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K2411 の電気的特性と機能

K2411のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK2411」です。


製品の詳細 ( Datasheet PDF )

部品番号 K2411
部品説明 MOSFET ( Transistor ) - 2SK2411
メーカ NEC
ロゴ NEC ロゴ 




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K2411 Datasheet, K2411 PDF,ピン配置, 機能
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed
for high speed switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 40 mMAX. (@ VGS = 10 V, ID = 15 A)
RDS(on)2 = 60 mMAX. (@ VGS = 4 V, ID = 15 A)
Low Ciss Ciss = 1500 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±30 A
Drain Current (pulse)*
ID(pulse)
±120
A
Total Power Dissipation (Tc = 25 ˚C) PT1
75 W
Total Power Dissipation (TA = 25 ˚C) PT2
1.5 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current** IAS 30 A
Single Avalanche Energy**
EAS 90 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
10.0
3.6 ±0.2
4.8 MAX.
1.3 ±0.2
4
123
1.3 ±0.2
0.5 ±0.2
0.75 ±0.1
2.54
2.8 ±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
4
1.0 ±0.3
1.4 ±0.2
(2.54) (2.54)
123
(0(.50R.8)R)
0.5 ±0.2
MP-25Z(SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13398EJ1V0DS00 (1st edition)
(Previous No. TC-2492)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994

1 Page





K2411 pdf, ピン配列
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TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
PW
100
10
ID (pulse)
= 10
RD(aS t(oVn)GLSim= i1te0dIVD)(DCP) ower
Tc = 25 °C
Single Pulse
100
DissipDa1tCi0onm1Lsmimsited
s
s
1
0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
FORWARD TRANSFER CHARACTERISTICS
Pulsed
VDS = 10 V
100
TA = –25 °C
10 25 °C
125 °C
1
0 5 10
VGS - Gate to Source Voltage - V
2SK2411, 2SK2411-Z
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 10 V
90
Pulsed
80
70 VGS = 6 V
60
50
40 VGS = 4 V
30
20
10
0 2 4 6 8 10 12
VDS - Drain to Source Voltage - V
3


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K2411 電子部品, 半導体
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SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 30 A
10
EAS = 90 mJ
VDD = 30 V
VGS = 20 V 0
1.0 RG = 25
10 µ 100 µ
1m
L - Inductive Load - H
10 m
2SK2411, 2SK2411-Z
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
VDD = 30 V
RG = 25
80 VGS = 20 V 0
IAS 30 A
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6

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