|
|
K3919のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK3919」です。 |
部品番号 | K3919 |
| |
部品説明 | MOSFET ( Transistor ) - 2SK3919 | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとK3919ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3919
2SK3919-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 2050 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
±256
Total Power Dissipation (TC = 25°C)
PT1 36
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 27
EAS 73
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
1 Page www.DataSheet4U.com
2SK3919
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100 ID(DC)
PW = 100 µs
40
35
30
25
20
15
10
5
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
10
RDS(on) Limited
(at VGS = 10 V)
1 Power Dissipation Limited
TC = 25°C
Single pulse
0.1
0.1
1
10
1 ms
10 ms
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 3.47°C/W
1
0.1
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single pulse
100 1000
Data Sheet D17078EJ4V0DS
3
3Pages www.DataSheet4U.com
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 27 A
EAS = 73 mJ
10
VDD = 12.5 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
1
0.01
0.1
1
L - Inductive Load - mH
10
2SK3919
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 12.5 V
100 RG = 25 Ω
VGS = 20 → 0 V
80 IAS ≤ 27 A
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6 Data Sheet D17078EJ4V0DS
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ K3919 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
K3911 | Field Effect Transistor | Toshiba |
K3918 | MOSFET ( Transistor ) - 2SK3918 | NEC |
K3919 | MOSFET ( Transistor ) - 2SK3919 | NEC |