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K3919 の電気的特性と機能

K3919のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK3919」です。


製品の詳細 ( Datasheet PDF )

部品番号 K3919
部品説明 MOSFET ( Transistor ) - 2SK3919
メーカ NEC
ロゴ NEC ロゴ 




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K3919 Datasheet, K3919 PDF,ピン配置, 機能
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3919
2SK3919-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
Low on-state resistance
RDS(on)1 = 5.6 mMAX. (VGS = 10 V, ID = 32 A)
Low Ciss: Ciss = 2050 pF TYP.
5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
±256
Total Power Dissipation (TC = 25°C)
PT1 36
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 27
EAS 73
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004

1 Page





K3919 pdf, ピン配列
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2SK3919
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100 ID(DC)
PW = 100 µs
40
35
30
25
20
15
10
5
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
10
RDS(on) Limited
(at VGS = 10 V)
1 Power Dissipation Limited
TC = 25°C
Single pulse
0.1
0.1
1
10
1 ms
10 ms
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 3.47°C/W
1
0.1
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single pulse
100 1000
Data Sheet D17078EJ4V0DS
3


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K3919 電子部品, 半導体
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SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 27 A
EAS = 73 mJ
10
VDD = 12.5 V
RG = 25
VGS = 20 0 V
Starting Tch = 25°C
1
0.01
0.1
1
L - Inductive Load - mH
10
2SK3919
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 12.5 V
100 RG = 25
VGS = 20 0 V
80 IAS 27 A
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6 Data Sheet D17078EJ4V0DS

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