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Datasheet H03N60 PDF ( 特性, スペック, ピン接続図 )

部品番号 H03N60
部品説明 N-Channel Power Field Effect Transistor
メーカ Hi-Sincerity Mocroelectronics
ロゴ Hi-Sincerity Mocroelectronics ロゴ 
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H03N60 Datasheet, H03N60 PDF,ピン配置, 機能
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
H03N60 Series
N-Channel Power Field Effect Transistor
Description
H03N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H03N60 Series
Symbol:
G
S
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H03N60E (TO-220AB)
H03N60F (TO-220FP)
Derate above 25°C
H03N60E (TO-220AB)
H03N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
3
12
±30
55
28
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H03N60E, H03N60F
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
10
9
8
7
6
5
4
3
2
1
0
0
On-Region Characteristic
VGS=8V
VGS=10V
VGS=6V
VGS=5V
VGS=4V
24 68
VDS, Drain-Source Voltage (V)
10
1000
800
600
400
200
0
0.1
Capacitance Characteristics
Ciss
Crss
Coss
1 10
VDS, Deain-Source Voltage (V)
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0
Typical On-Resistance & Drain Current
VGS=10V
1 2 34 5
ID, Drain Current (A)
6
Gate Charge Waveforms
12
10
8
6
4
2
0
0 12 34
Q, Gate Charge (nC)
H03N60E, H03N60F
5
Drain Current Variation with
Gate Voltage and Temperature
6
VDS=10 V
TC= 25oC
5
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-Source Voltage (V)
Maximum Safe Operating Area
10
VDS=200V
1
1ms
10ms
100ms
0.1
10
100
VDS, Drain-Source Voltage (V)
1000
HSMC Product Specification


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