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IRF7201PBF の電気的特性と機能

IRF7201PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7201PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7201PBF Datasheet, IRF7201PBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD- 95022
IRF7201PbF
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
S
S
S
G
HEXFET® Power MOSFET
AA
1
2
8D
7D
VDSS = 30V
3 6D
4 5 D RDS(on) = 0.030
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
SO-8
Max.
30
7.3
5.8
58
2.5
1.6
0.02
± 20
30
70
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
mJ
V/ns
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Typ.
–––
Max.
50
Units
°C/W
1
9/30/04

1 Page





IRF7201PBF pdf, ピン配列
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IRF7201PbF
100 VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
100
10
TJ = 150°C
1
TJ = 25°C
VDS = 10V
1
20µs PULSE WIDTH
A
3.0 3.5 4.0 4.5 5.0 5.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3


3Pages


IRF7201PBF 電子部品, 半導体
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IRF7201PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
DB
A5
6
E
8765
1234
H
0.25 [.010]
A
6X e
θ
e1
A
C
y
8X b
A1
0.25 [.010] C A B
0.10 [.004]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
DIM
INCHES
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BASIC
e 1 .025 BASIC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
MILLIMET ERS
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BASIC
0.635 BAS IC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X L 8X c
7
FOOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
6 www.irf.com

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部品番号部品説明メーカ
IRF7201PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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