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P4N60のメーカーはFairchild Semiconductorです、この部品の機能は「SSP4N60」です。 |
部品番号 | P4N60 |
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部品説明 | SSP4N60 | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとP4N60ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
www.DataSheet4U.com
Advanced Power MOSFET
SSP4N60AS
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V
Lower RDS(ON) : 2.037 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 600 V
RDS(on) = 2.5 Ω
ID = 4 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
600
4
2.5
16
+_ 30
262
4
10
3.0
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1 Page www.DataSheet4U.com
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom : 4.5 V
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
5
4
VGS = 10 V
3
2
VGS = 20 V
1
@ Note : TJ = 25 oC
0
0 2 4 6 8 10 12
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
900
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
600
300 C oss
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
SSP4N60AS
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
10-1
0.4
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.6 0.8 1.0
VSD , Source-Drain Voltage [V]
1.2
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 120 V
VDS = 300 V
VDS = 480 V
5
@ Notes : ID = 4.0 A
0
0 5 10 15 20 25
QG , Total Gate Charge [nC]
3Pages www.DataSheet4U.com
SSP4N60AS
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
VGS Driver
RG
VGS
Same Type
as DUT
•dv/dt controlled by “RG”
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ P4N60 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
P4N60 | SSP4N60 | Fairchild Semiconductor |