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P4N60 の電気的特性と機能

P4N60のメーカーはFairchild Semiconductorです、この部品の機能は「SSP4N60」です。


製品の詳細 ( Datasheet PDF )

部品番号 P4N60
部品説明 SSP4N60
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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P4N60 Datasheet, P4N60 PDF,ピン配置, 機能
www.DataSheet4U.com
Advanced Power MOSFET
SSP4N60AS
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V
Lower RDS(ON) : 2.037 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 600 V
RDS(on) = 2.5
ID = 4 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
600
4
2.5
16
+_ 30
262
4
10
3.0
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation

1 Page





P4N60 pdf, ピン配列
www.DataSheet4U.com
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom : 4.5 V
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
5
4
VGS = 10 V
3
2
VGS = 20 V
1
@ Note : TJ = 25 oC
0
0 2 4 6 8 10 12
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
900
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
600
300 C oss
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
SSP4N60AS
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
10-1
0.4
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.6 0.8 1.0
VSD , Source-Drain Voltage [V]
1.2
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 120 V
VDS = 300 V
VDS = 480 V
5
@ Notes : ID = 4.0 A
0
0 5 10 15 20 25
QG , Total Gate Charge [nC]


3Pages


P4N60 電子部品, 半導体
www.DataSheet4U.com
SSP4N60AS
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
VGS Driver
RG
VGS
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

6 Page



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共有リンク

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部品番号部品説明メーカ
P4N60

SSP4N60

Fairchild Semiconductor
Fairchild Semiconductor


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