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PDF USF05G49 Data sheet ( Hoja de datos )
| Número de pieza | USF05G49 | |
| Descripción | LOW POWER SWITCHING AND CONTROL APPLICATIONS | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA THYRISTOR SILICON PLANAR TYPE
USF05G49
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
USF05G49
Unit: mm
Repetitive Peak Off−State Voltage : VDRM = 400 V
Repetitive Peak Reverse Voltage : VRRM = 400 V
Average On−State Current
: IT (AV) = 500 mA
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off−State Voltage
and Repetitive Peak Reverse
Voltage
Non-Repetitive Peak Reverse Voltage
(Non−Repetitive<5ms, Tj = 0~125°C)
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG(AV)
VFGM
VRGM
IGM
Tj
Tstg
400
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
−5
125
−40~125
−40~125
Note 1: di / dt Test condition: iG = 5mA, tgw = 10µs, tgr≤250ns
UNIT
V
V
mA
mA
A
A2s
A / µs
W
W
V
V
mA
°C
°C
MARKING
Part No. (or abbreviation code)
PA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
JEDEC
―
JEITA
―
TOSHIBA
13-5B1A
Weight: 0.2 g (typ.)
Note:
Should be used with
gate resistance as
shown below.
1 2004-07-06
1 page  
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USF05G49
5 2004-07-06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet USF05G49.PDF ] | |
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| USF05G49 | LOW POWER SWITCHING AND CONTROL APPLICATIONS | Toshiba Semiconductor |
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