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J598 PDF Data sheet ( 特性 )

部品番号 J598
部品説明 2SJ598
メーカ NEC
ロゴ NEC ロゴ 



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J598 Datasheet, J598 PDF,ピン配置, 機能
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 130 mMAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mMAX. (VGS = –4.0 V, ID = –6 A)
Low Ciss: Ciss = 720 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ598
TO-251 (MP-3)
2SJ598-Z
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT
m20
m12
m30
23
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS –12
EAS 14.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2000, 2001

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