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PDF IHW20N120R Data sheet ( Hoja de datos )
| Número de pieza | IHW20N120R | |
| Descripción | Reverse Conducting IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Soft Switching Series
IHW20N120R
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IHW20N120R 1200V
Maximum Ratings
IC
20A
VCE(sat),Tj=25°C
1.55V
Tj,max
175°C
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H20R120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
1200
40
20
60
60
20
13
30
50
130
120
±20
±25
357
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 May 06
1 page  
www.DataSheet4U.com
Soft Switching Series
IHW20N120R
50A
VGE=20V
40A 17V
14V
30A 12V
10V
9V
20A
7V
10A
0A
0V 1V 2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
VGE=20V
17V
40A
14V
12V
30A 10V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
TJ=175°C
40A
25°C
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
IC=40A
IC=20A
IC=10A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE =15V)
Power Semiconductors
5
Rev. 2.4 May 06
5 Page 
www.DataSheet4U.com
Soft Switching Series
IHW20N120R
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τr11
Tj (t)
p(t) r1
τ2
r2
r2
τrnn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =39pF.
Rev. 2.4 May 06
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IHW20N120R.PDF ] | |
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