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5S1265 の電気的特性と機能

5S1265のメーカーはFairchild Semiconductorです、この部品の機能は「 KA5S1265」です。


製品の詳細 ( Datasheet PDF )

部品番号 5S1265
部品説明 KA5S1265
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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5S1265 Datasheet, 5S1265 PDF,ピン配置, 機能
www.DataSheet4U.com
www.fairchildsemi.com
KA5S-SERIES
KA5S0765C/KA5S09654QT/KA5S0965/
KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
Features
• Wide Operating Frequency Range Up to 150Khz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start-up Current (max:170uA)
• Low Operating Current (max:12mA)
• Internal High Voltage SenseFET
• Over Voltage Protection With Latch Mode (Min23V)
• Over Load Protection With Latch Mode
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
TO-3P-5L
1
TO-220F-5L
TO-220-5L
11
1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync.
Internal Block Diagram
VCC
3
Soft Start
& Sync
Feedback
VCC UVLO
+
-
15/9V
Vref
5
VREF
4
0.95mA
4µA
-
Vth.sy
+
7V
6V
2.5V
VREF
VCC
R
2.5V
OSC CLK
-
+
Voffset
+
-
Bias
VREF UVLO
SQ
R
OLP
(Vfb=7.5V)
TSD
(Tj=160°C)
OVP
(VCC=25V)
1µs Window
Open Circuit
S
Q
R
Shutdown Latch
OCP
(VS=1.1V)
Power-on Reset
(VCC=6.5V)
Drain
1
SenseFET
VS
Rsense
2 GND
©2001 Fairchild Semiconductor Corporation
Rev.1.0.2

1 Page





5S1265 pdf, ピン配列
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KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
KA5S0965
Maximum Drain Voltage
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Symbol
VD,MAX
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSS
PD (Watt H/S)
Derating
TJ
TA
TSTG
KA5S12656
Maximum Drain Voltage
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
VD,MAX
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSS
PD (Watt H/S)
Derating
TJ
TA
TSTG
Value
650
650
±30
36
9.0
5.8
28(950)
30
-0.3 to VCC
-0.3 to 8
170
1.33
+160
-25 to +85
-55 to +150
650
650
±30
48
12
8.4
30(785)
30
-0.3 to VCC
-0.3 to 8
160
1.28
+160
-25 to +85
-55 to +150
Unit
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W / °C
°C
°C
°C
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W / °C
°C
°C
°C
3


3Pages


5S1265 電子部品, 半導体
www.DataSheet4U.com
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
Electrical Characteristics (SFET Part; Continued)
(Ta = 25°C unless otherwise specified)
Parameter
KA5S0965
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
KA5S12656
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Symbol
Conditions
Min. Typ. Max. Unit
BVDSS VGS=0V, ID=50µA
650 -
-
IDSS
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
- 50
- 200
RDS(on) VGS=10V, ID=4.5A
- 0.96 1.2
gfs VDS=50V, ID=4.5A
5.0 -
-
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 1750 -
- 190 -
- 78 -
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
- 20 50
- 23 55
- 85 180
- 30 70
Qg
VGS=10V, ID=9.0A,
VDS=0.5BVDSS(MOSFET
- 74 95
Qgs Switching time are
- 12 -
Essentially independent of
Qgd Operating temperature)
- 35 -
V
µA
µA
S
pF
nS
nC
BVDSS VGS=0V, ID=50µA
650 -
-
IDSS
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
- 50
- 200
RDS(on) VGS=10V, ID=6.0A
- 0.72 0.9
gfs VDS=50V, ID=4.0A
5.7 -
-
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 2700 -
- 300 -
- 61 -
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
- 18 -
- 37 -
- 88 -
- 36 -
Qg
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
-
- 140
Qgs Switching time are
- 20 -
Essentially independent of
Qgd Operating temperature)
- 69 -
V
µA
µA
S
pF
nS
nC
6

6 Page



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共有リンク

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部品番号部品説明メーカ
5S1265

KA5S1265

Fairchild Semiconductor
Fairchild Semiconductor


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