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N01L083WC2A の電気的特性と機能

N01L083WC2AのメーカーはNanoAmp Solutionsです、この部品の機能は「Ultra-low Power SRAMs」です。


製品の詳細 ( Datasheet PDF )

部品番号 N01L083WC2A
部品説明 Ultra-low Power SRAMs
メーカ NanoAmp Solutions
ロゴ NanoAmp Solutions ロゴ 




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N01L083WC2A Datasheet, N01L083WC2A PDF,ピン配置, 機能
www.DataSheet4U.com
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N01L083WC2A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx8 bit
Overview
Features
The N01L083WC2A is an integrated memory
device containing a 1 Mbit Static Random Access
Memory organized as 131,072 words by 8 bits. The
device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N01L1618N1A, which is processed to
operate at lower voltages. The device operates
with two chip enable (CE1 and CE2) controls and
output enable (OE) to allow for easy memory
expansion. The N01L083WC2A is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package
Type
N01L083WC2AT 32 - TSOP I
N01L083WC2AN 32 - STSOP I
N01L083WC2AS 32 SOP
Pin Configuration
Operating
Temperature
-40oC to +85oC
Power
Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
Pin Descriptions
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin
STSOP-I
TSOP-I
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
NC 1
A16 2
32 VCC
31 A15
A14 3
30 CE2
A12 4
29 WE
A7 5
28 A13
A6 6
27 A8
A5 7
26 A9
A4 8
25 A11
A3 9
24 OE
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
VSS 16
23 A10
22 CE1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
32-Pin
SOP
Pin Name
A0-A16
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23033-05 12/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N01L083WC2A pdf, ピン配列
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NanoAmp Solutions, Inc.
N01L083WC2A
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
VCC
2.3 3.0 3.6 V
Data Retention Voltage
VDR Chip Disabled3
1.8
V
Input High Voltage
VIH
1.8 VCC+0.3 V
Input Low Voltage
VIL
–0.3 0.6 V
Output High Voltage
VOH
IOH = 0.2mA
VCC–0.2
V
Output Low Voltage
VOL IOL = -0.2mA
0.2 V
Input Leakage Current ILI VIN = 0 to VCC
0.5 µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
0.5 µA
Read/Write Operating Supply Current
@ 1 µS Cycle Time2
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.0 3.0 mA
Read/Write Operating Supply Current
@ 70 nS Cycle Time2
ICC2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
9.5 14.0 mA
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
ICC3
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
4
mA
diagram)
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
3.0 mA
Maximum Standby Current3
VIN = VCC or 0V
ISB1 Chip Disabled
tA= 85oC, VCC = 3.6 V
2.0 20 µA
Maximum Data Retention Current3
IDR
Vcc = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
10 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
Stock No. 23033-05 12/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3


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N01L083WC2A 電子部品, 半導体
www.DataSheet4U.com
NanoAmp Solutions, Inc.
N01L083WC2A
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE=VIH)
Address
tRC
tAA
CE1
CE2
OE
Data Out
tCO
tLZ
tOE
High-Z
tOLZ
Data Valid
tHZ
tOHZ
Data Valid
Stock No. 23033-05 12/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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部品番号部品説明メーカ
N01L083WC2A

Ultra-low Power SRAMs

NanoAmp Solutions
NanoAmp Solutions


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