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H327 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H327
部品説明 PNP Silicon Transistor
メーカ Shantou Huashan Electronic
ロゴ Shantou Huashan Electronic ロゴ 



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H327 Datasheet, H327 PDF,ピン配置, 機能
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H327
SWITCHING AND AMPLFIER APPLICATIONS
Suitable for AF-Driver stages and low power output stages
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
-55~150
150
625mW
-50V
-45V
-5V
-500mA
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat)
VBE(ON)
fT
Ccbo
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-50
V IC=-100 A, IE=0
Collector-Emitter Breakdown Voltage
-45
V IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
-5
V IE=-100 A IC=0
Collector Cut-off Current
-100 nA
VCB=-20V, IE=0
Emitter-Base Cut-off Current
-10 A
VEB=-5V, IC=0
DC Current Gain
100 600 VCE=-1V, IC=-100mA
40 VCE=-1V, IC=-500mA
Collector- Emitter Saturation Voltage
-0.7 V IC=-500mA, IB=-50mA
Base-Emitter On Voltage
-1.2 V VCE=-1V, IC=-500mA
Current Gain-Bandwidth Product
100 MHz VCE=-5V, IC=-10mA
Collector-Base Capacitance
8 pF VCB=-10V, IE=0
F=1MHz
hFE Classification
16
100 250
25
160 400
40
250 600

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PNP Silicon Transistor

Shantou Huashan Electronic
Shantou Huashan Electronic

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