PDF AWT6202 Data sheet ( Hoja de datos )

Número de pieza	AWT6202
Descripción	GSM850/GSM900/DCS/PCS Quad Band PowerPlexer with Integrated Power Control
Fabricantes	ANADIGICS
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No Preview Available ! www.DataSheet4U.com FEATURES • ANADIGICS developed technologies (InGaP HBT/pHEMT) • High Module Efficiency: 45% GSM900 (Equivalent 57% PA Efficiency) 40% DCS (Equivalent 52% PA Efficiency) • Fully Compliant Harmonics Under Mismatch • Integrated Power Control Scheme • Integrated Reference Voltage • Integrated PA/Switch/Low Pass Filters • Symmetrical low loss receive paths • High isolation switch (TX to RX, RX on/off) • ESD protected antenna port (15 kV) • Small footprint (6 mm x 6 mm x 1.0 mm) • GPRS capable (class 12) • Power control range >50dB APPLICATIONS • Dual/Tri/Quad BandHandsets and PDAs AWT6202 GSM850/GSM900/DCS/PCS Quad Band PowerPlexerTM with Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.3 PRODUCT DESCRIPTION The AWT6202 is the third generation GSM PowerPlexerTM. It has been developed to minimize time to market for GSM handset and PDA designers. This highly integrated module requires only basic RF decoupling and DC blocking on the receive and antenna ports. All the RF ports are 50 V. The part also has an excellent ESD rating of 1 kV on RF inputs and 15 kV on the antenna port. The temperature stability of the high gain HBT PAs are ideal for supporting class 12 GPRS, while the low loss pHEMT switch provides high isolation with very low current consumption. The integrated power control scheme reduces the number of external components associated with a power control function, and facilitates fast and easy production calibration. The power control range is typically 55 dB. DCS/PCS_IN DCS/PCS CNTL1 CNTL2 CNTL3 VBATT CEXT VRAMP Logic/Power Controller GSM_IN GSM850/900 Figure 1: Functional Block Diagram 02/2005 DCS_RX ANT GSM850_RX 1 page www.DataSheet4U.com Table 8: GSM850/900 Electrical Specification (Mode = GSM_TX_EN, VBATT = 3.5 V, ZIN = ZOUT = 50 ς, TC = 25 ± 3 °C, PIN = 3 dBm, PWIDTH = 1154 ms, Duty Cycle = 25%) AWT6202 PARAMETER MIN TYP MAX UNITS COMMENTS Frequency (FIN) 824 - 849 MHz 880 - 915 MHz Input Power (PIN) 0 3 5 dBm Output Power (POUT) 33.2 33.7 - dBm VRAMP = 1.6 V Degraded Output Power 30.8 31.7 - dBm VBATT = 3.0 V, VRAMP = 1.6 V, PIN = 0 dBm, TC = 85°C Module Efficiency (PA+Switch+Filter) - 45 - % VRAMP = 1.6 V, PIN = 3 dBm, VBATT = 3.5 V Forward Isolation 1 PIN = 5 dBm, VBATT = 3 to 4.8 V - -55 -51 dBm Mode = GSM900_RX_EN or GSM850_RX_EN, see control table Forward Isolation 2 VRAMP = 0.2 V, PIN = 5 dBm, - -25 -10 dBm VBATT = 3 to 4.8 V Mode = GSM_TX_EN, see control table Harmonic 2nd 3fo to 12.75 GHz - - -40 -40 - - dBm VBATT = 3 to 4.8 V, POUT = 5 to 33.2 dBm Stability: < 1GHz > 1GHz VSWR =10:1 All angles - - - - -36 -30 dBm VBATT = 3 to 4.8 V, POUT = 5 to 33.2 dBm, TC = -20 to 85 °C Ruggedness 10:1 - PIN = 5 dBm, - VSWR VBATT = 4.8 V, POUT = 5 to 33.2 dBm, All phases of load FIN = 849 MHz - -88 -84 dBm FOUT = 869 to 894 MHz RBW = VBW = 100 kHz, POUT = 5 to 33.2 dBm RX Band Noise FIN = 915 MHz - -81 -78 dBm FOUT = 925 to 935 MHz RBW = VBW = 100 kHz, POUT = 5 to 33.2 dBm FIN = 915 MHz - -88 -84 dBm FOUT = 935 to 960 MHz RBW = VBW = 100 kHz, POUT = 5 to 33.2d Bm Input VSWR - - 2.5:1 All power levels ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 5 5 Page www.DataSheet4U.com NOTES AWT6202 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 11 11 Page

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