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K8A5615ETA の電気的特性と機能

K8A5615ETAのメーカーはSamsung Electronicsです、この部品の機能は「Flash Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 K8A5615ETA
部品説明 Flash Memory
メーカ Samsung Electronics
ロゴ Samsung Electronics ロゴ 




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K8A5615ETA Datasheet, K8A5615ETA PDF,ピン配置, 機能
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K8A5615ET(B)A
FLASH MEMORY
Document Title
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory
Revision History
Revision No. History
0.0 Advanced
Draft Date
March 15, 2004
Remark
Advance
0.1 Revision
- Change the speed code
7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz
June 1, 2004
Preliminary
0.2 Revision
- Change the device version ID
Top boot device : 22ECH --> 22FCH
Bottom boot device : 22EDH --> 22FDH
- Not support accelerated quad word program operation
July 5, 2004
Preliminary
0.3 Revision
- Change the initial access time of asynchronous read mode
K8A56156ET(B)A-DE7C
tAA : 70ns--->80ns
tCE : 70ns--->80ns
- Support accelerated quad word program operation
August 3, 2004
Preliminary
0.4 Revision
- Add the operation flow chart
August 23, 2004 Preliminary
0.5 Revision
September 6, 2004 Preliminary
- Add the description of range limitation of data read out during pro-
gram suspend.(Refer to "Program Suspend/Resume" paragragh)
0.6 Revision
December 13, 2004 Preliminary
- Add the requirement and note of Quadruple word program operation
1.0 Specification finalized
December 16, 2004
1 Revision 1.0
December, 2004

1 Page





K8A5615ETA pdf, ピン配列
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K8A5615ET(B)A
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
Vpp
CLK
CE
OE
WE
WP
RESET
RDY
AVD
A0~A23
DQ0~
DQ15
Bank 0
Address
X Bank 0
Dec Cell Array
Y Dec
I/O
Interface
&
Bank
Control
Bank 1
Address
Bank 15
Address
Y Dec
X Bank 1
Dec Cell Array
X Bank 15
Dec Cell Array
Y Dec
Block
Inform
Erase
Control
Program
Control
FLASH MEMORY
Latch &
Control
Latch &
Control
Latch &
Control
High
Voltage
Gen.
3 Revision 1.0
December, 2004


3Pages


K8A5615ETA 電子部品, 半導体
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K8A5615ET(B)A
Table 3-1. Top Boot Block Address Table (K8A5615ETA)
Bank
Block
Block Size
BA474
32 Kwords
BA473
32 Kwords
BA472
32 Kwords
BA471
32 Kwords
BA470
32 Kwords
BA469
32 Kwords
BA468
32 Kwords
BA467
32 Kwords
BA466
32 Kwords
BA465
32 Kwords
BA464
32 Kwords
BA463
32 Kwords
BA462
32 Kwords
Bank 1
BA461
32 Kwords
BA460
32 Kwords
BA459
32 Kwords
BA458
32 Kwords
BA457
32 Kwords
BA456
32 Kwords
BA455
32 Kwords
BA454
32 Kwords
BA453
32 Kwords
BA452
32 Kwords
BA451
32 Kwords
BA450
32 Kwords
BA449
32 Kwords
BA448
32 Kwords
BA447
32 Kwords
BA446
32 Kwords
BA445
32 Kwords
BA444
32 Kwords
BA443
32 Kwords
BA442
32 Kwords
BA441
32 Kwords
BA440
32 Kwords
Bank 2
BA439
32 Kwords
BA438
32 Kwords
BA437
32 Kwords
BA436
32 Kwords
BA435
32 Kwords
BA434
32 Kwords
BA433
32 Kwords
BA432
32 Kwords
BA431
32 Kwords
6
FLASH MEMORY
(x16) Address Range
ED0000h-ED7FFFh
EC8000h-ECFFFFh
EC0000h-EC7FFFh
EB8000h-EBFFFFh
EB0000h-EB7FFFh
EA8000h-EAFFFFh
EA0000h-EA7FFFh
E98000h-E9FFFFh
E90000h-E97FFFh
E88000h-E8FFFFh
E80000h-E87FFFh
E78000h-E7FFFFh
E70000h-E77FFFh
E68000h-E6FFFFh
E60000h-E67FFFh
E58000h-E5FFFFh
E50000h-E57FFFh
E48000h-E4FFFFh
E40000h-E47FFFh
E38000h-E3FFFFh
E30000h-E37FFFh
E28000h-E2FFFFh
E20000h-E27FFFh
E18000h-E1FFFFh
E10000h-E17FFFh
E08000h-E0FFFFh
E00000h-E07FFFh
DF8000h-DFFFFFh
DF0000h-DF7FFFh
DE8000h-DEFFFFh
DE0000h-DE7FFFh
DD8000h-DDFFFFh
DD0000h-DD7FFFh
DC8000h-DCFFFFh
DC0000h-DC7FFFh
DB8000h-DBFFFFh
DB0000h-DB7FFFh
DA8000h-DAFFFFh
DA0000h-DA7FFFh
D98000h-D9FFFFh
D90000h-D97FFFh
D88000h-D8FFFFh
D80000h-D87FFFh
D78000h-D7FFFFh
Revision 1.0
December, 2004

6 Page



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部品番号部品説明メーカ
K8A5615ETA

Flash Memory

Samsung Electronics
Samsung Electronics


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