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IR082HD4C10U-P2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IR082HD4C10U-P2
部品説明 HIGH VOLTAGE HALF BRIDGE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IR082HD4C10U-P2 Datasheet, IR082HD4C10U-P2 PDF,ピン配置, 機能
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Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Features
Output Power IGBT’s in half-bridge configuration
575V rated breakdown voltage
High side gate drive designed for bootstrap
operation
Matched propagation delay for both channels
Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Metal heatsink back for improved PD
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT’s are matched to
simplify use.The device can operate up to 575 volts.
Product Summary
VIN (max)
PD (TA = 25°C)
VCE(ON) typ
Package
575V
3.0W
3.0V
7 Pin
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IR082HD4C10U-P2

HIGH VOLTAGE HALF BRIDGE

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