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AO3409 の電気的特性と機能

AO3409のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「P-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 AO3409
部品説明 P-Channel Enhancement Mode Field Effect Transistor
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AO3409 Datasheet, AO3409 PDF,ピン配置, 機能
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AO3409
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3409 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3409 is Pb-free
(meets ROHS & Sony 259 specifications). AO3409L
is a Green Product ordering option. AO3409 and
AO3409L are electrically identical.
Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130m(VGS = -10V)
RDS(ON) < 200m(VGS = -4.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-2.6
-2.2
-20
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

1 Page





AO3409 pdf, ピン配列
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
0
0
-10V
-8V
-6V
-5-.55VV
VGS=-4.5V
-4V
-3.5V
-3.0V
1234
-VDS (Volts)
Fig 1: On-Region Characteristics
5
10
8
6
4
2
0
1
250 1.6
200 1.4
150 VGS=-4.5V
100
VGS=-10V
50
0123456
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1
0.8
0
VDS=-5V
25°C
125°C
2345
-VGS(Volts)
Figure 2: Transfer Characteristics
370
6
VGS=-10V
18
VGS=-4.59V
ID=-2A
25 50 75 100 125 21250
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
300
250
ID=-2A
200
125°C
150
100 25°C
50
0
3 4 5 6 7 8 9 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
1.0E-04
1.0E-05
1.0E-06
0.0
0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
Alpha & Omega Semiconductor, Ltd.


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共有リンク

Link :


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