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E180NE10 の電気的特性と機能

E180NE10のメーカーはSTMicroelectronicsです、この部品の機能は「 STE180NE10」です。


製品の詳細 ( Datasheet PDF )

部品番号 E180NE10
部品説明 STE180NE10
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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E180NE10 Datasheet, E180NE10 PDF,ピン配置, 機能
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® STE180NE10
N-CHANNEL 100V - 4.5 m- 180A ISOTOP
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
STE180NE10
100 V < 6 m
s TYPICAL RDS(on) = 4.5 m
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
ID
180 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation Withstand Voltage (AC-RMS)
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1999
Value
Un it
100 V
100 V
± 20
V
180 A
119 A
540 A
360
2. 88
W
W /o C
2500
-55 to 150
150
( 1) ISD 180 Α, di/dτ 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
1/8

1 Page





E180NE10 pdf, ピン配列
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STE180NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 90 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V ID = 180 A VGS = 10 V
Min.
Typ.
35
100
142
37
60
Max.
185
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(on)
tr
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 90 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V
ID = 180 A
RG = 4.7
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
110
100
100
50
92
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 180 A VGS = 0
ISD = 180 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
180
540
1.5
170
850
10
Unit
A
A
V
ns
µC
A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8


3Pages


E180NE10 電子部品, 半導体
www.DataSheet4U.com
STE180NE10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



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部品番号部品説明メーカ
E180NE10

STE180NE10

STMicroelectronics
STMicroelectronics


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