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STD12NM50NのメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STD12NM50N |
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部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD12NM50Nダウンロード(pdfファイル)リンクがあります。 Total 18 pages
www.DataSheet4U.com
STB12NM50N - STD12NM50N
STF12NM50N - STP12NM50N
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
VDSS
(@Tjmax)
550V
550V
550V
550V
RDS(on)
<0.38Ω
<0.38Ω
<0.38Ω
<0.38Ω
ID
11A
11A
11A (1)
11A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
Marking
B12NM50N
D12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape & reel
Tape & reel
Tube
Tube
November 2006
Rev 7
1/18
www.st.com
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1 Page www.DataSheet4U.com
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
dv/dt(3)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤11A, di/dt ≤400A/µs, VDD =80%V(BR)DSS
Value
Unit
TO-220-D/D²PAK TO-220FP
500
± 25
11
6.7
44
100
0.8
15
11(1)
6.7(1)
44 (1)
25
0.2
V
V
A
A
A
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
TO-220
D²PAK
Value
Unit
DPAK TO-220FP
1.25
62.5 100
5 °C/W
62.5 °C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Ias, Vdd=50V)
Value
5
350
Unit
A
mJ
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3Pages www.DataSheet4U.com
Electrical characteristics
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220/
DPAK/ D²PAK
Figure 2. Thermal impedance for TO-220/
DPAK/ D²PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics
Figure 6. Transfer characteristics
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部品番号 | 部品説明 | メーカ |
STD12NM50N | N-channel Power MOSFET | STMicroelectronics |