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MCR100-6 の電気的特性と機能

MCR100-6のメーカーはDnIです、この部品の機能は「Standard Gate SCR」です。


製品の詳細 ( Datasheet PDF )

部品番号 MCR100-6
部品説明 Standard Gate SCR
メーカ DnI
ロゴ DnI ロゴ 




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MCR100-6 Datasheet, MCR100-6 PDF,ピン配置, 機能
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Sensitive Gate
Silicon Controlled -
Rectifiers
Symbol
3. Anode
Features
Repetitive Peak Off-State Voltage : 400V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
Pb - Free Packages are available
1.Cathode
2.Gate
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
MCR100-6
BVDRM = 400V
IT(RMS) = 0.8 A
ITSM = 10 A
TO-92
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC = 74 °C
180° Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
TA = 25 °C, pulse width 1.0
TA = 25 °C, t = 8.3ms
IFGM
Forward Peak Gate Current
TA = 25 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width 1.0
Ratings
400
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 125
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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MCR100-6 pdf, ピン配列
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Fig 1. Gate Characteristics
101
100
25oC
VGM(5V)
PGM(2W)
PG(AV)(0.1W)
10-1
100
VGD(0.2V)
101 102 103
Gate Current [mA]
Fig 3. Typical Forward Voltage
10
104
MCR100-6
Fig 2. Maximum Case Temperature
140
120
100
θ = 180o
80
60 2
40
360°
20 : Conduc t ion Angl e
0
0.0 0.1 0.2 0.3 0.4
Average On-State Current [A]
0.5
Fig 4. Thermal Response
103
0.6
1 125oC
25oC
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage [V]
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
102
Rθ (J-C)
101
100
10-2 10-1 100 101 102
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
10
103
11
0.1
-50
0 50 100
Junction Temperature[oC]
150
0.1
-50
0 50 100
Junction Temperature[oC]
150
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共有リンク

Link :


部品番号部品説明メーカ
MCR100-3

Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)

Motorola Semiconductors
Motorola Semiconductors
MCR100-3

SCR

Semtech
Semtech
MCR100-3

Sensitive Gate Silicon Controlled Rectifiers

ON Semiconductor
ON Semiconductor
MCR100-3

Small Signal Diode

Taiwan Semiconductor
Taiwan Semiconductor


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