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DFP50N06 の電気的特性と機能

DFP50N06のメーカーはDnIです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 DFP50N06
部品説明 N-Channel MOSFET
メーカ DnI
ロゴ DnI ロゴ 




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DFP50N06 Datasheet, DFP50N06 PDF,ピン配置, 機能
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DFP50N06
N-Channel MOSFET
Features
RDS(on) (Max 0.022 )@VGS=10V
Gate Charge (Typical 36nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
BVDSS = 60V
RDS(ON) = 0.022 ohm
ID = 50A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
60
50
38
200
±25
642
12
7.0
120
0.8
- 55 ~ 175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
1.25
-
62.5
May, 2005. Rev.1.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7

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DFP50N06 pdf, ピン配列
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DFP50N06
Fig 1. On-State Characteristics
103
VGS[ V ] Top 15
10
8
7
102 6
5.5
5
Bottom 4.5
101
100
10-1
Note
1. 250 Pulse Test
2. TC = 25
100
VDS[V], Drain to Source Voltage
101
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
70
60
50
40
30 VGS=10[V]
20 VGS=20[V]
10 Note
TJ = 25
0
0 50 100 150 200
ID[ A ], Drain Current
Fig 5. Capacitance Characteristics
3000
2500
Coss
2000
Ciss
1500
1. Ciss = Cgs + Cgd (Cds = shorted)
2. COss = Cds + Cgd
3. Crss = Cgd
Note
1. VGS = 0[V]
2. Frequency = 1[MHz]
1000
500
Crss
0
10-1 100 101
VDS[ V ], Drain to Source Voltage
Fig 2. Transfer Characteristics
102
25[ ]
125[ ]
-55[ ]
101
Note
VDS = 30 [ V ]
250 Pulse Test
100
2 4 6 8 10
Vgs[ v ], Gate-Source Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
102
101
100
0.2
Tj=175oC
Tj=25oC
Note
VGS = 0V
250 Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
Vsd[ V ], Source-Drain Voltage
1.6
Fig 6. Gate Charge Characteristics
12
10
8
VDS = 30V
VDS =12V
VDS = 48V
6
4
2 Note
ID = 50A
0
0 5 10 15 20 25 30 35 40 45
Gate Charge [nC]
3/7
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved


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DFP50N06 電子部品, 半導体
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DFP50N06
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---PW--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6/7
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved

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部品番号部品説明メーカ
DFP50N06

N-Channel MOSFET

DnI
DnI


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