DataSheet.jp

UC62LS1008 の電気的特性と機能

UC62LS1008のメーカーはETCです、この部品の機能は「Low Power CMOS SRAM 128K x 8 Bits」です。


製品の詳細 ( Datasheet PDF )

部品番号 UC62LS1008
部品説明 Low Power CMOS SRAM 128K x 8 Bits
メーカ ETC
ロゴ ETC ロゴ 




このページの下部にプレビューとUC62LS1008ダウンロード(pdfファイル)リンクがあります。
Total 11 pages

No Preview Available !

UC62LS1008 Datasheet, UC62LS1008 PDF,ピン配置, 機能
www.DataSheet4U.com
Low Power CMOS SRAM
128K X 8 Bits
UC62LS1008
-20/-25
Features:
• Vcc operation voltage : 3.0V~ 3.6V
• Low power consumption :
20mA (Max.) operating current
1uA (Typ.) CMOS standby current
• High Speed Access time :
25ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Data retention supply voltage as low as 1.2V
• Easy expansion with CE\ and OE\ options
Description
The UC62LS1008 is a high performance, very low power
CMOS Static Random Access Memory organized as 131,072
words by 8 bits and operates from 3.0V to 3.6V supply
voltage. Advanced CMOS technology and circuit techniques
provide both high speed and low power features with a
typical CMOS standby current of 1uA and maximum access
time of 25ns in 3.0V operation.
Easy memory expansion is provided enable (CE\), and
active LOW output enable (OE\) and three-state output
drivers.
The UC62LS1008 has an automatic power down feature,
reducing the power consumption significantly when chip is
deselected.
The UC62LS1008 is available in the JEDEC standard 32 pin
450mil Plastic SOP, 8mmx20.0mm TSOP (type I), and
8mmx13.4mm STSOP.
PRODUCT FAMILY
Product Family
Operating
Tempature
UC62LS1008HC
UC62LS1008FC
UC62LS1008GC
UC62LS1008AC
UC62LS1008HI
UC62LS1008FI
UC62LS1008GI
UC62LS1008AI
0 ~ 70
-40 ~ 85
Vcc Range
3.0V ~ 3.6V
3.0V ~ 3.6V
Speed
(ns)
Vcc=3V(Max.)
20/25
20/25
Power Consumption
STANDBY
Operating
Vcc=3.3V(Typ.) Vcc=3.6V(Max.)
1uA 20mA
1uA 20mA
Package
Type
TSOP-32
SOP-32
STSOP-32
DICE
TSOP-32
SOP-32
STSOP-32
DICE
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
9 UC62LS1008FI 24
10 UC62LS1008FC 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A11 1
A9 2
A8 3
A13 4
WE 5
CE2
A15
6
7
UC62LS1008HI
VCC 8 UC62LS1008HC
NC 9 UC62LS1008GI
A16 10 UC62LS1008GC
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 GND
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
BLOCK DIAGRAM
CE2
CE
WE
OE
ROW
Address
COL
Address
CE
WE
OE
MEMORY ARRAY
128K X 8 Bits
COLUMN DECODER
SENSE AMPLIFIER
&
WRITE DRIVER
X8
I/O BUFFER
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Preliminary Rev. 1.0
PAGE 1

1 Page





UC62LS1008 pdf, ピン配列
www.DataSheet4U.com
Low Power CMOS SRAM
128K X 8 Bits
UC62LS1008
-20/-25
DC ELECTRICAL CHARACTERISTICS (TA=0 to 70 )
Symbol
VIL
VIH
IL
IOL
VOL
Comment
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Test Condition
VCC=2.4V
VCC=3.6V
VCC=3.6V VIN=0V to VCC
VCC=3.6V CE\=VIH or OE\=VIH
VIO=0V t VCC
VCC=3.6V, IOL=2mA
MIN.
-0.5
2.0
-
-
-
TYP.(1)
-
-
-
-
-
MAX.
0.8
Vcc-0.2
1
1
0.4
UNITS
V
V
uA
uA
V
VOH Output High Voltage
VCC=3.0V, IOH=-1mA
2.4 -
-V
ICC
Operating Power Supply
Current
CE\=VIL,IDQ=0mA, F=Fmax(3)
-
- 20 mA
ISB1 TTL Standby Current
CE\=VIH, VIN=VIH to VIL
- - 1 mA
ISB2
CMOS Standby Current
CE\ VCC-0.2V, VIN=VCC-0.2V
to 0.2V
-
1
5 uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA=0
Symbol
VDR
ICCDR
tDR
tR
Comment
VCC to Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Test Condition
CE\ VCC - 0.2V
VIN VCC-0.2V or VIN
CE\ VCC - 0.2V
VIN VCC-0.2V or VIN
0.2V
0.2V
See Retention Waveform
1. VCC = 1.5V, TA = 25 .
2. tRC = Read Cycle Time
to 70 )
MIN.
TYP.(1)
1.2 -
- 0.05
0
TRC(2)
-
-
MAX.
-
0.5
-
-
UNITS
V
uA
ns
ns
LOW VCC DATA RETENTION WAVEFORM(1) (CE\ Controlled)
Vcc
CE
Data Retention Mode
tCDR
VDR >= 1.2V
tR
VIH CE >= VCC - 0.2V
VIH
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Preliminary Rev. 1.0
PAGE 3


3Pages


UC62LS1008 電子部品, 半導体
www.DataSheet4U.com
Low Power CMOS SRAM
128K X 8 Bits
UC62LS1008
-20/-25
AC ELECTRICAL CHARACTERISTICS (TA=0 to 70 , VCC=3.0V~3.6V)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tWC
DESCRIPTION
Write Cycle Time
UC62LS1008-20 UC62LS1008-25
Min Typ Max Min Typ Max
20 -
- 25 -
-
tE1LWH
tCW Chip Select to END of Write
15 -
- 15 -
-
tAVWL
tAS Address Setup Time
0- - 0 - -
tAVWH
tAW
Address valid to End of Write
15 -
- 15 -
-
tWLWH
tWP Write Pulse Width
15 -
- 15 -
-
tWHAX
tWR Write Recovery Time
0- - 0 - -
tWLOZ
tWHZ Write to Output in High Z
- - 8 - - 10
tDVWH
tDW Data to Write Time Overlap
8-
10 -
tWHDX
tDH Data Hold Time for Write End
0- - 0 - -
tGHOZ
tOHZ Output Disable to Output In High Z - - 8 - - 10
tWHQX
tOW End of Write to Output Active
5- - 5 - -
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITECYCLE1(1)
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ADDRESS
tWC
tAW
OE
CE
WE
DOUT
DIN
tAS
(4,10)
tOHZ
tCW(11)
tWP(2)
tDW tDH
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Preliminary Rev. 1.0
PAGE 6

6 Page



ページ 合計 : 11 ページ
 
PDF
ダウンロード
[ UC62LS1008 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
UC62LS1008

Low Power CMOS SRAM 128K x 8 Bits

ETC
ETC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap