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PDF IXRH40N120 Data sheet ( Hoja de datos )
| Número de pieza | IXRH40N120 | |
| Descripción | Power Discretes/IGBTs/Reverse Blocking Series | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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IGBT with Reverse
Blocking capability
IXRH 40N120
VCES = ±1200 V
IC25 = 55 A
VCE(sat) = 2.3 V typ.
C TO-247 AD
G
G
C
E
C (TAB)
E G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
VGE(th)
I
CES
IGES
QGon
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
±1200
V
± 20
V
55 A
35 A
80 A
600 V
300 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
V
CE
=
V;
CES
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
VCE = 120V; VGE = 15 V; IC = 35 A
2.3 2.7 V
2.8 V
4 8V
50 µA
3.0 mA
500 nA
90 nC
Features
• IGBT with NPT (non punch through)
structure
• reverse blocking capability
- function of series diode monolithically
integrated, no external series diode
required
- soft reverse recovery
• positive temperature coefficient of
saturation voltage
• Epoxy of TO-247 package meets
UL 94V-0
Applications
converters requiring reverse blocking
capability:
- current source inverters
- matrix converters
- bi-directional switches
- resonant converters
- induction heating
- auxiliary switches for soft switching
in the main current path
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-5
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 page  
www.DataSheet4U.com
IXRH 40N120
60
A
50
IRM
40
VCE = -600 V
VGE = ±15 V
IC = 35 A
TJ = 125°C
2400
trr ns
2100
t
1800
1500
30
IRM
1200
20 900
0 100 200 300 400 500 A/µs
diF/dt
Fig. 13 Typ. turn off characteristics
of the internal diode
20
V
16
12
8 VCE = 120 V
IC = 35 A
4
0
0.00 0.04 0.08 0.12 0.16
QG
Fig. 15 Typical gate charge
C
36
C
35
Qrr 34
VCE = -600 V
VGE = ±15 V
TJ = 125°C
33
32
31
30
0 100 200 300 400 500 A/µs
diF/dt
Fig. 14 Typ. turn off characteristics
of the internal diode
0.45
0.4
K/W
0.3
ZthJC
0.2
0.1
0.0
0.001
0.01
0.1
IXRH40N120
1 s 10
t
Fig. 16 Typ. transient thermal impedance
Ri 0.034 0.048 0.092 0.174 0.075
τ 0.0001 0.0035 0.02 0.142 0.18
Free
wheeling
diode
Voltage
source
Driver
Gate
Resistor
Device
under
test
Fig. 17 turn-on/turn-off with
external diode (DSEP 30-12)
current
sensing
current
sensing
Voltage
source
+15 V
IGBT
is on
DUT
Driver
Gate DUT
Resistor
current
sensing
Fig. 18 turn-on/turn-off with internal diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXRH40N120.PDF ] | |
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