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PDF IXEH40N120D1 Data sheet ( Hoja de datos )
| Número de pieza | IXEH40N120D1 | |
| Descripción | NPT3 IGBT | |
| Fabricantes | IXYS Corporation | |
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NPT3 IGBT
IXEH 40N120
IXEH 40N120D1
IC25 = 60 A
VCES
= 1200 V
VCE(sat) typ. = 2.4 V
C
G
E
IXEH 40N120
C TO-247 AD
G
E
IXEH 40N120D1
G
C
E
C (TAB)
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 90°C
VGE
=
±15
V;
R
G
=
39
Ω;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
non-repetitive
60
40
50
VCES
10
A
A
A
µs
TC = 25°C
300 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
40
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
V = 600 V; I = 40 A
CE C
VGE = ±15 V; RG = 39 Ω
2.4 3.0 V
2.8 V
4.5 6.5 V
0.4 mA
0.4 mA
200 nA
85 ns
50 ns
440 ns
50 ns
6.1 mJ
3.0 mJ
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 600 V; VGE = 15 V; IC = 25 A
2 nF
250 nC
0.42 K/W
Features
• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• optional HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• TO-247 package
- industry standard outline
- epoxy meets UL 94V-0
Applications
• AC drives
• DC drives and choppers
• Uninteruptible power supplies (UPS)
• switched-mode and resonant-mode
power supplies
• inductive heating, cookers
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXEH40N120D1.PDF ] | |
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