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IRFNL210B PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFNL210B
部品説明 200V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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IRFNL210B Datasheet, IRFNL210B PDF,ピン配置, 機能
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IRFNL210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
• 1.0A, 200V, RDS(on) = 1.5@VGS = 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-92L
IRFNL Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJL
Parameter
Thermal Resistance, Junction-to-Lead
D
!
"
!"
G!
"
"
!
S
IRFNL210B
200
1.0
0.93
10
± 30
40
3.3
0.031
5.0
3.1
0.025
-55 to +150
300
Typ Max
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002

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