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IRFN340SMD PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFN340SMD
部品説明 N-CHANNEL POWER MOSFET
メーカ Seme LAB
ロゴ Seme LAB ロゴ 



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IRFN340SMD Datasheet, IRFN340SMD PDF,ピン配置, 機能
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IRFN340SMD
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
3 .6 0 (0 .1 4 2 )
M ax.
BVDSS
ID(cont)
RDS(on)
400V
10A
0.55W
FEATURES
• HERMETICALLY SEALED SURFACE
2 MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD1 PACKAGE
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Pad 1 – Source Pad 2 – Drain
Pad 3 – Gate
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C)
10A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
6A
40A
PD Power Dissipation @ Tcase = 25°C
125W
Linear Derating Factor
1.0W/°C
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Energy 1
Repetitive Avalanche Energy 1
Peak Diode Recovery 3
650mJ
10A
12.5mJ
4.0V/ns
TJ , Tstg
TL
RqJC
RqJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.0°C/W
TBD
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ VDD = 50V,Starting TJ = 25°C, EAS =[0.5 * L* (IL2) * [BVDSS/(BVDSS-VDD)], Peak IL = 10A VGS = 10V,
2) 25 £ RG £ 200W
3) ISD £ 10A , di/dt £ 120A/ms , VDD £ BVDSS , TJ £ 150°C
4) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00

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