DataSheet.jp

IRFN240 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFN240
部品説明 POWER MOSFET N-CHANNE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 6 pages
		

No Preview Available !

IRFN240 Datasheet, IRFN240 PDF,ピン配置, 機能
Previous Datasheet
www.DataSheet4U.com
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1548
HEXFET® POWER MOSFET
IRFN240
N-CHANNEL
200 Volt, 0.18HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-stateresistancecom-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Product Summary
Part Number
BVDSS
IRFN240
200V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
0.18
ID
18A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN240
18
11
72
125
1.0
±20
450
18
12.5
5.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g
To Order

1 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ IRFN240.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRFN240

POWER MOSFET N-CHANNE

International Rectifier
International Rectifier
IRFN240SMD

N-CHANNEL POWER MOSFET

Seme LAB
Seme LAB

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap