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IRFN140SMD PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFN140SMD
部品説明 N-CHANNEL POWER MOSFET
メーカ Seme LAB
ロゴ Seme LAB ロゴ 



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IRFN140SMD Datasheet, IRFN140SMD PDF,ピン配置, 機能
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SEME
LAB
IRFN140SMD
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
3 .6 0 (0 .1 4 2 )
M ax.
VDSS
ID(cont)
RDS(on)
FEATURES
100V
13.9A
0.077W
2
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
SMD1 – Surface Mount Package
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C)
22A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
13.9A
88A
PD Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
250mJ
5.5V/ns
TJ , Tstg
TL
RqJC
RqJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.67°C/W
4°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 25V , L ³ 0.8mH , RG = 25W , Peak IL = 22A , Starting TJ = 25°C
3) @ ISD £ 22A , di/dt £ 170A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00

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