|
|
PDF 74HCT3G34 Data sheet ( Hoja de datos )
| Número de pieza | 74HCT3G34 | |
| Descripción | Triple Buffer Gate | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 74HCT3G34 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
74HC3G34; 74HCT3G34
Triple buffer gate
Rev. 05 — 7 May 2009
Product data sheet
1. General description
The 74HC3G34; 74HCT3G34 are high-speed Si-gate CMOS devices. They provide three
buffer gates.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features
I Wide supply voltage range from 2.0 V to 6.0 V
I Symmetrical output impedance
I High noise immunity
I Low-power dissipation
I Balanced propagation delays
I Multiple package options
I ESD protection:
N HBM JESD22-A114E exceeds 2000 V
N MM JESD22-A115-A exceeds 200 V
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range Name
74HC3G34DP
−40 °C to +125 °C TSSOP8
74HCT3G34DP
74HC3G34DC
−40 °C to +125 °C VSSOP8
74HCT3G34DC
74HC3G34GD
−40 °C to +125 °C XSON8U
74HCT3G34GD
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3 × 2 × 0.5 mm
1 page  
NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
74HCT3G34
VIH HIGH-level input
voltage
VIL LOW-level input
voltage
VOH HIGH-level output
voltage
VOL LOW-level output
voltage
II
ICC
∆ICC
CI
input leakage current
supply current
additional supply
current
input capacitance
VCC = 4.5 V to 5.5 V
VCC = 4.5 V to 5.5 V
VI = VIH or VIL
IO = −20 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 4.5 V
VI = VIH or VIL
IO = 20 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 4.5 V
VI = VCC or GND; VCC = 5.5 V
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
per input; VCC = 4.5 V to 5.5 V;
VI = VCC − 2.1 V; IO = 0 A
[1] All typical values are measured at Tamb = 25 °C.
−40 °C to +85 °C
Min Typ[1] Max
2.0 1.6
-
- 1.2 0.8
4.4 4.5
4.13 4.32
-
-
- 0 0.1
- 0.15 0.33
- - ±1.0
- - 10
- - 375
- 1.5 -
−40 °C to +125 °C Unit
Min Max
2.0 - V
- 0.8 V
4.4 - V
3.7 - V
- 0.1 V
- 0.4 V
- ±1.0 µA
- 20 µA
- 410 µA
- - pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
74HC3G34
tpd propagation delay nA to nY; see Figure 5
[2]
VCC = 2.0 V
- 29 95
VCC = 4.5 V
- 9 19
VCC = 6.0 V
tt transition time nY; see Figure 5
-
[3]
8 16
VCC = 2.0 V
- 18 95
VCC = 4.5 V
- 6 19
VCC = 6.0 V
CPD power dissipation VI = GND to VCC
capacitance
-
[4] -
5 16
10 -
−40 °C to +125 °C Unit
Min Max
- 125 ns
- 25 ns
- 20 ns
- 125 ns
- 25 ns
- 20 ns
- - pF
74HC_HCT3G34_5
Product data sheet
Rev. 05 — 7 May 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
14. Abbreviations
Table 11. Abbreviations
Acronym
Description
CMOS
Complementary Metal Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM Machine Model
TTL Transistor-Transistor Logic
15. Revision history
Table 12. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
74HC_HCT3G34_5
Modifications:
20090507
Product data sheet
-
74HC_HCT3G34_4
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Added type number 74HC3G34GD and 74HCT3G34GD (XSON8U package)
74HC_HCT3G34_4
20060309
Product data sheet
-
74HC_HCT3G34_3
74HC_HCT3G34_3
20030519
Product specification
-
74HC_HCT3G34_2
74HC_HCT3G34_2
20030210
Product specification
-
74HC_HCT3G34_1
74HC_HCT3G34_1
20031003
Product specification
-
-
74HC_HCT3G34_5
Product data sheet
Rev. 05 — 7 May 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet 74HCT3G34.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 74HCT3G34 | Triple buffer gate |  Philips |
| 74HCT3G34 | Triple Buffer Gate | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |