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PDF MG300Q2YS65H Data sheet ( Hoja de datos )
| Número de pieza | MG300Q2YS65H | |
| Descripción | IGBT Module Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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MG300Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS65H
High Power & High Speed Switching
Applications
Unit: mm
· High input impedance
· Enhancement-mode
· The electrodes are isolated from case.
Equivalent Circuit
E1
E2
C1 E2
G1 E1/C2 G2
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
¾
¾
JEDEC
JEITA
TOSHIBA
Weight: 430 g (typ.)
Rating
1200
±20
300
600
300
600
2700
150
-40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
V
N▪m
―
―
2-109C4A
1 2003-03-11
1 page  
1600
1200
VCE, VGE – QG
Common emitter
RL = 2 W
Tc = 25°C
VCE = 0 V
800
600 V
400 V
200 V
400
16
12
8
4
00
0
600
1200
1800
2400
3000
Charge QG (nC)
MG300Q2YS65H
100000
10000
C – VCE
Cies
Coes
Cres
1000
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
100
0.01
0.1
1
10
Collector-emitter voltage VCE (V)
100
Short circuit SOA
6
5
4
3
2
VCC <= 900 V
1 Tj <= 125°C
tw = 5 ms
0
0 200 400 600 800 1000 1200 1400
Collector-emitter voltage VCE (V)
1000
100
10
Reverse bias SOA
1
Tj <= 125°C
VGE = ±15 V
RG = 2.7 W
0.1
0
500
1000
Collector-emitter voltage VCE (V)
1500
Rth (t) – tw
1
0.1
0.01
Diode stage
Transistor stage
Tc = 25°C
0.001
0.001
0.01
0.1
1
Pulse width tw (s)
10
5
2003-03-11
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MG300Q2YS65H.PDF ] | |
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