DataSheet.jp

3LP03SS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3LP03SS
部品説明 P-Channel Silicon MOSFET
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 

Total 4 pages
		

No Preview Available !

3LP03SS Datasheet, 3LP03SS PDF,ピン配置, 機能
www.DataSheet4U.com
Ordering number : EN8649
3LP03SS
3LP03SS
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
High resistance to damage from ESD (TYP 300V)
[with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30 V
Gate-to-Source Voltage (*1)
VGSS
--10 V
Drain Current (DC)
Drain Current (Pulse)
ID
IDP PW10µs, duty cycle1%
--0.25
--1
A
A
Allowable Power Dissipation
Channel Temperature
PD
Tch
0.15
150
W
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : XG
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=--8V, VDS=0V
VDS=--10V, ID=--100µA
VDS=--10V, ID=--120mA
ID=--120mA, VGS=--4V
ID=--60mA, VGS=--2.5V
ID=--10mA, VGS=--1.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
min
--30
--0.4
0.24
Ratings
typ
max
Unit
V
--1 µA
--1 µA
--1.4 V
0.4 S
1.5 1.9
2.0 2.8
4.0 8.0
40 pF
8 pF
4.5 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83005PE MS IM TA-101198 No.8649-1/4

1 Page





ページ 合計 : 4 ページ
PDF
ダウンロード
[ 3LP03SS.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
3LP03SS

There is a function of P-Channel Silicon MOSFET.

Sanyo Semicon Device
Sanyo Semicon Device

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap