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3LP03M PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3LP03M
部品説明 P-Channel Silicon MOSFET
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 



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3LP03M Datasheet, 3LP03M PDF,ピン配置, 機能
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Ordering number : ENN8154
3LP03M
3LP03M
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30 V
Gate-to-Source Voltage (*1)
VGSS
--10 V
Drain Current (DC)
Drain Current (Pulse)
ID
IDP PW10µs, duty cycle1%
--0.25
--1
A
A
Allowable Power Dissipation
Channel Temperature
PD
Tch
0.15
150
W
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : XG
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID= --1mA, VGS=0
VDS= --30V, VGS=0
VGS= --8V, VDS=0
VDS= --10V, ID= --100µA
VDS= --10V, ID= --120mA
ID= --120mA, VGS= --4V
ID= --60mA, VGS= --2.5V
ID= --10mA, VGS= --1.5V
VDS= --10V, f=1MHz
VDS= --10V, f=1MHz
VDS= --10V, f=1MHz
min
--30
--0.4
0.24
Ratings
typ
max
Unit
V
--1 µA
--1 µA
--1.4 V
0.4 S
1.5 1.9
2.0 2.8
4.0 8.0
40 pF
8 pF
4.5 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TA-101199 No.8154-1/4

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