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1HP04CH の電気的特性と機能

1HP04CHのメーカーはSanyo Semicon Deviceです、この部品の機能は「P-Channel Silicon MOSFET General-Purpose Switching Device」です。


製品の詳細 ( Datasheet PDF )

部品番号 1HP04CH
部品説明 P-Channel Silicon MOSFET General-Purpose Switching Device
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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1HP04CH Datasheet, 1HP04CH PDF,ピン配置, 機能
www.DataSheet4U.com
Ordering number : ENA0926
1HP04CH
SANYO Semiconductors
DATA SHEET
1HP04CH
Features
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)
Ratings
--100
±20
--80
--320
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--100µA
VDS=--10V, ID=--40mA
ID=--40mA, VGS=--10V
ID=--20mA, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
min
--100
--1.2
85
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
145 mS
13.5
18
15 21
14.5
pF
2.5 pF
1.0 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PE TI IM TC-00000808 No. A0926-1/4

1 Page





1HP04CH pdf, ピン配列
1HP04CH
yfs-- ID
5
VDS= --10V
3
2
100
7
5
3
2
Ta=
--25°C
75°C
25°C
10
7
5
3
2
1.0
--0.1
7
5
3
2
23
5 7 --1.0 2 3 5 7 --10 2 3
Drain Current, ID -- mA
SW Time -- ID
5 7 --100
IT12914
VDD= --50V
VGS= --10V
1000
7
5
3
2
td(off)
tf
100
7
5 td(on)
3
2 tr
10
--1.0
23
5 7 --10
23
Drain Current, ID -- mA
VGS -- Qg
--10
VDS= --50V
--9 ID= --80mA
--8
5 7 --100
IT12916
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg -- nC
IT12918
PD -- Ta
0.7
5
3
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
--0.2
5
3
10
7
5
3
2
IS -- VSD
VGS=0V
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD -- V IT12915
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
1.0 Crss
7
5
0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100
Drain-to-Source Voltage, VDS -- V IT12917
ASO
7
5 IDP= --320mA
3
PW10µs
2
--0.1 ID= --80mA
7
5
100ms10ms
100µs
3
2
--0.01
7
5
Operation in this area
is limited by RDS(on).
3 Ta=25°C
2 Single pulse
--0.001 Mounted on a ceramic board (900mm20.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100
23
Drain-to-Source Voltage, VDS -- V IT12919
0.6
0.5
0.4
0.3
0.2
0.1
Mounted on a ceramic board (900mm 20.8mm)
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12909
No. A0926-3/4


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共有リンク

Link :


部品番号部品説明メーカ
1HP04CH

P-Channel Silicon MOSFET General-Purpose Switching Device

Sanyo Semicon Device
Sanyo Semicon Device
1HP04CH

Small Signal MOSFET

ON Semiconductor
ON Semiconductor


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