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IRLZ44ZPBF の電気的特性と機能

IRLZ44ZPBFのメーカーはInternational Rectifierです、この部品の機能は「AUTOMOTIVE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLZ44ZPBF
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLZ44ZPBF Datasheet, IRLZ44ZPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95539
AUTOMOTIVE MOSFET
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRLZ44Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
ikRθCS
Case-to-Sink, Flat Greased Surface
ikRθJA Junction-to-Ambient
jkRθJA Junction-to-Ambient (PCB Mount)
IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 13.5m
S ID = 51A
D2Pak
IRLZ44ZS
TO-262
IRLZ44ZL
Max.
51
36
204
80
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.irf.com
1
7/21/04

1 Page





IRLZ44ZPBF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1
0.1
0.1
3.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRLZ44Z/S/LPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10 3.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.0
100.0
TJ = 25°C
TJ = 175°C
10.0
1.0
2.0
VDS = 20V
60µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
60
TJ = 175°C
40
TJ = 25°C
20
VDS = 10V
380µs PULSE WIDTH
0
0 10 20 30 40 50
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRLZ44ZPBF 電子部品, 半導体
IRLZ44Z/S/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
6
320
ID
TOP 3.7A
5.7A
240 BOTTOM 31A
160
80
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
3.0
2.5
2.0 ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

6 Page



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部品番号部品説明メーカ
IRLZ44ZPBF

AUTOMOTIVE MOSFET

International Rectifier
International Rectifier


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