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PDF FD120T06A5B Data sheet ( Hoja de datos )
| Número de pieza | FD120T06A5B | |
| Descripción | Fred Die | |
| Fabricantes | International Rectifier | |
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FRED Die in Wafer Form
z 100% Tested at Probe c
z Available in Tape and Reel,
Chip Pack, and Sawn on Film d (upon request)
PD - 20987 rev. A
FD120T06A5B
600V
VF = 1.1 V
(max.)
5" Wafer
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Description
Min Typ Max
Test Conditions
VFM Maximum Forward Voltage
––– ––– 1.1V TJ = 25°C, IF = 15A
VRRM
Minimum Reverse Breakdown Voltage 600V
–––
––– TJ = 25°C, IRRM = 100µA
IRM Max. Reverse Leakage Current
trr Typ. Reverse Recovery Time
––– ––– 10µA TJ = 25°C, VRRM = 600V
––– 60ns ––– IF = 1A, di/dt = 100A/µs, VR = 30V
––– 190ns ––– IF = 15A, di/dt = 100A/µs, VR = 30V
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Scribe Line Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Packaged Part
Cr-Ni-Ag ( 1kA-2kA-3kA)
99%Al, 1%Si (3mm)
0.120" x 0.120" (see drawing)
125 mm
14 mils
90 ±10 µm
0.25 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
15ETL06 Series
Die Outline
40 (1.57)
Wafer flat alligned with
side b of the die
Ø 125 (4.92)
a 0.35 ± 0.01
c (14 ± 0.4)
C
A
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
2. CONTROLLING DIMENSION (INCH):
3. DIMENSIONS AND TOLERANCES:
a = 3.05 +0, - 0.01
(120 +0, - 0.4)
b = 3.05 +0, - 0.01
(120 +0, - 0.4)
c = 1.98 +0, - 0.01
(78.1 +0, - 0.4)
d = 1.98 +0, - 0.01
(78.1 +0, - 0.4)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Note:
c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
d Part number shown is for die in waveform. Contact factory for these other options.
www.irf.com
1
12/23/03
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