(PDF) GS1333 Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	GS1333
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : GS1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 800m -550mA Description The GS1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Features Simple Gate Drive Small Package Outline *Fast Switching Speed Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Ratings -20 12 -550 -440 2.5 0.35 0.003 -55 ~ +150 Unit V V mA mA A W W/ Ratings 360 Unit /W 1/4 1 page

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PDF GS1333 Data sheet ( Hoja de datos )