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Datasheet GE40T03 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GE40T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GE40T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 25m 28A
The GE40T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe |  GTM | mosfet |
GE4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GE40N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/25 REVISED DATE :2005/12/12B
GE40N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 17m 40A
The GE40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 2 | GE40T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GE40T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 25m 28A
The GE40T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 3 | GE4407 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/28 REVISED DATE :
GE4407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 14m -50A
The GE4407 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 4 | GE4953 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR GEMOS
MOS FIELD EFFECT TRANSISTOR
GE4953
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V �  GEMOS transistor | |
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