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2SK3112 の電気的特性と機能

2SK3112のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK3112
部品説明 SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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2SK3112 Datasheet, 2SK3112 PDF,ピン配置, 機能
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 110 mMAX. (VGS = 10 V, ID = 13 A)
Low input capacitance
Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3112
TO-220AB
2SK3112-S
TO-262
2SK3112-ZJ
TO-263(MP-25ZJ)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
200
Gate to Source Voltage (VDS = 0 V) VGSS
±30
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±25
±75
Total Power Dissipation (TC = 25°C) PT1
100
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
55 to +150
25
250
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 , VGS = 20 V0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
© 1998,2001

1 Page





2SK3112 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
70
60
50
40
30
20
10 VGS = 10 V
0 Pulsed
0 5 10 15 20 25 30
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
5.0 ID = 1 mA
4.0
3.0
2.0
1.0
50 25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.5
Pulsed
0.4
ID = 25 A
13 A
0.3 5 A
0.2
0.1
0
0 4 8 12 16
VGS - Gate to Source Voltage - V
20
2SK3112
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1 Tch = 125˚C
75˚C
0.1
25˚C
-25˚C
0.01
0.001
0.0001
0
VDS = 10 V
Pulsed
2 4 6 8 10 12
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
Tch = 25˚C
10
25˚C
75˚C
125˚C
1
0.1
0.01
0.01
0.1 1 10
ID- Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.6
VGS = 10 V
Pulsed
0.5
0.4
0.3
0.2
0.1
0
0.1 1
10 100
ID - Drain Current - A
Data Sheet D13335EJ1V0DS
3


3Pages


2SK3112 電子部品, 半導体
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 25 A
10
EAS = 250mJ
1
0.01
0.1 1
L - Inductive Load - mH
10
2SK3112
SINGLE AVALANCHE ENERGY
DERATING FACTOR
VDD = 100 V
100 RG = 25
VGS = 20 V 0 V
IAS 25 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6 Data Sheet D13335EJ1V0DS

6 Page



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Link :


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