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PDF G8551S Data sheet ( Hoja de datos )
| Número de pieza | G8551S | |
| Descripción | PNP EPITAXIAL TRANSISTOR | |
| Fabricantes | GTM | |
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G8551S
ISSUED DATE :2003/11/11
REVISED DATE :2004/11/29B
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
Description
The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
Features
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complimentary to G8051S
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
VCBO
VCEO
VEBO
IC
Tj
TsTG
PD
Ratings
-25
-20
-5
-0.7
+150
-55 ~ +150
625
Unit
V
V
V
A
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO -25 -
BVCEO -20 -
BVEBO -5 -
ICBO
--
hFE1 100 -
hFE2
- 100
VCE(sat)
-
-
VBE(on)
-
-
VBE - -
fT 150 -
Cob - 10
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=-10uA,IE=0
- V IC=-1mA,IB=0
- V IE=-10uA,IC=0
-1 uA VCB=-20V, IE=0
500 VCE=-1V,IC=-150mA
- VCE=-1V,IC=-500mA
-0.5 V lC=-500mA,IB=-50mA
-1 V VCE=-1V,IC=-150mA
-1.0 V VCE=-1V,IC=-10mA
-
MHz
VCE=-10V,Ic=-20Ma, f=100MHz
- pF VCB=-10V, IE=0A,f=1MHz
Classification Of hFE1
Rank
Range
C
100-180
D
160-300
E
280-500
G8551S
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet G8551S.PDF ] | |
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