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Datasheet G2314 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G2314 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/05/16 REVISED DATE :
G2314
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 75m 3.5A
The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivene |  GTM | mosfet |
G23 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G2300 | CMOS Positive Voltage Regulator
Pb Free Plating Product
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 6A
The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is GTM regulator | | |
| 2 | G2301 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
CORPORATION
G2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
The G2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2301 is universally GTM mosfet | | |
| 3 | G2302 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 85m 3.2A
The G2302 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
Descriptio GTM mosfet | | |
| 4 | G2303 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
CORPORATION
G2303
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
BVDSS RDS(ON) ID
-30V 240m -1.9A
The G2303 provides the designer with the best combination of fast switching, low on-resistance and cost-effec GTM mosfet | | |
| 5 | G2304 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
CORPORATION
G2304
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
BVDSS RDS(ON) ID
25V 117m 2.7A
The G2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effecti GTM mosfet | | |
| 6 | G2304A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/21 REVISED DATE :
G2304A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 117m 2.5A
Description
The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and GTM mosfet | | |
| 7 | G2305 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
CORPORATION
G2305
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
BVDSS RDS(ON) ID
-20V 65m -4.2A
The G2305 provides the designer with the best combination of fast switching, low on-resistance and cost-effect GTM mosfet | |
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