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IRFU3504ZPBF の電気的特性と機能

IRFU3504ZPBFのメーカーはInternational Rectifierです、この部品の機能は「AUTOMOTIVE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU3504ZPBF
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU3504ZPBF Datasheet, IRFU3504ZPBF PDF,ピン配置, 機能
www.DataSheet4U.com
AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
PD - 95521A
IRFR3504ZPbF
IRFU3504ZPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 9.0m
ID = 42A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR3504Z
I-Pak
IRFU3504Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
77
54
42
310
90
0.60
± 20
77
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.66
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
1/17/05

1 Page





IRFU3504ZPBF pdf, ピン配列
IRFR/U3504ZPbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
0.1
4.5V
30µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
1
0.1
30µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.0
100.0
TJ = 175°C
10.0
1.0
0.1
4.0
TJ = 25°C
VDS = 20V
30µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
60
TJ = 175°C
50
40
TJ = 25°C
30
20
10
0
0
VDS = 10V
380µs PULSE WIDTH
10 20 30 40
ID, Drain-to-Source Current (A)
50
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRFU3504ZPBF 電子部品, 半導体
IRFR/U3504ZPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
QG
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
320
ID
280 TOP 5.0A
6.4A
240 BOTTOM 42A
200
160
120
80
40
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.5
4.0
3.5 ID = 250µA
3.0
2.5
L
VCC
0
DUT
2.0
1K -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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部品番号部品説明メーカ
IRFU3504ZPBF

AUTOMOTIVE MOSFET

International Rectifier
International Rectifier


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