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HER504 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 HER504
部品説明 (HER501 - HER508) 5.0A ULTRAFAST DIODE
メーカ Won-Top Electronics
ロゴ Won-Top Electronics ロゴ 

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HER504 Datasheet, HER504 PDF,ピン配置, 機能
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WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
HER501 – HER508 Pb
5.0A ULTRAFAST DIODE
AB
A
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-201AD
Dim Min Max
A 25.4 —
B 7.20 9.50
C 1.20 1.30
D 4.80 5.30
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 5.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
HER
501
50
35
HER
502
100
70
HER
503
200
140
HER
504
300
210
HER
505
400
280
HER
506
600
420
HER
507
800
560
HER
508
1000
700
IO 5.0
IFSM
VFM
IRM
trr
Cj
Tj
TSTG
150
1.0
50
75
1.3
10
100
-65 to +125
-65 to +150
1.7
75
50
Unit
V
V
A
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER501 – HER508
1 of 4
© 2006 Won-Top Electronics

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