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GSS4511 の電気的特性と機能

GSS4511のメーカーはGTMです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 GSS4511
部品説明 Power MOSFET ( Transistor )
メーカ GTM
ロゴ GTM ロゴ 




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GSS4511 Datasheet, GSS4511 PDF,ピン配置, 機能
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Pb Free Plating Product
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
GSS4511
N-CH BVDSS 35V
N-CH RDS(ON) 25m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
7.0A
-35V
N-CH RDS(ON) 40m
Description
N-CH ID
-6.1A
The GSS4511 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
35 -35
20 20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4511
Page: 1/7

1 Page





GSS4511 pdf, ピン配列
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
P-Channel Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-35
-
-1.0
-
-
-
-0.02
-
9
-
-
-
-3.0
-
100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-6A
nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-35V, VGS=0
- -25 uA VDS=-28V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
-
-
32 40 m VGS=-10V, ID=-6A
50 60
VGS=-4.5V, ID=-4A
10 16
ID=-6A
2 - nC VDS=-28V
6-
VGS=-4.5V
10 -
VDS=-18V
6-
ID=-1A
26
-
ns VGS=-10V
RG=3.3
7-
RD=18
690 1100
165 -
130 -
pF
VGS=0V
VDS=-25V
f=1.0MHz
5.2 7.8
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
12
Max.
-1.2
-
-
Unit Test Conditions
V IS=-1.7A, VGS=0V
ns IS=-6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135
/W when mounted on Min. copper pad.
GSS4511
Page: 3/7


3Pages


GSS4511 電子部品, 半導体
P-Channel
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSS4511
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 6/7

6 Page



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部品番号部品説明メーカ
GSS4511

Power MOSFET ( Transistor )

GTM
GTM


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