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STE30NK90ZのメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。 |
部品番号 | STE30NK90Z |
| |
部品説明 | N-CHANNEL MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTE30NK90Zダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
STE30NK90Z
N-CHANNEL 900V - 0.21Ω - 28A ISOTOP
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STE30NK90Z 900 V < 0.26 Ω 28 A 500 W
s TYPICAL RDS(on) = 0.21 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
Figure 1: Package
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
ISOTOP
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR WELDING EQUIPMENT
Table 2: Order Codes
SALES TYPE
STE30NK90Z
MARKING
E30NK90Z
PACKAGE
ISOTOP
PACKAGING
TUBE
January 2005
Rev.3
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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
900
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10 µA
100 µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100 µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 150 µA
3
3.75 4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 14 A
0.21 0.26
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 14 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 720 V
VDD = 450 V, ID = 13 A
RG = 4.7Ω VGS = 10 V
(see Figure 17)
VDD = 720 V, ID = 26 A,
VGS = 10V
(see Figure 20)
Min.
Typ.
26
12000
852
166
Max.
377
67
59
250
72
350 490
51
190
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
28 A
112 A
VSD (1) Forward On Voltage
ISD = 28 A, VGS = 0
2V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 18)
1 µs
18.9 µC
36.6 A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 18)
1.33 µs
25.2 µC
37.8 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
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Figure 15: Avalanche Energy vs Starting Tj
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部品番号 | 部品説明 | メーカ |
STE30NK90Z | N-CHANNEL MOSFET | STMicroelectronics |