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Número de pieza | SPP100N08S2-07 | |
Descripción | OptiMOS Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPP100N08S2-07
SPB100N08S2-07
Product Summary
VDS 75 V
RDS(on) max. SMD version 6.8 mΩ
ID 100 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP100N08S2-07
SPB100N08S2-07
Package
P- TO220 -3-1
P- TO263 -3-2
Ordering Code
Q67060-S6044
Q67060-S6046
Marking
PN0807
PN0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=100A, VDS=60V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
100
100
400
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page SPP100N08S2-07
SPB100N08S2-07
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP100N08S2-07
240 Ptot = 300W
A
i
200
180
160
140
120
100
80
60
VGS [V]
a
b
c
d
e
hf
g
g
h
i
f
e
4.8
5.0
5.3
5.5
5.8
6.0
6.3
6.5
10.0
40 d
20 c
b
0a
0 1 2 3 4V 6
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
220
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP100N08S2-07
24
Ω
ef
gh
20
18
16
14
12
10
8
6i
4
VGS [V] =
2e f g h i
5.8 6.0 6.3 6.5 10.0
0
0 20 40 60 80
100 120
A 160
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
120
S
180
160
140
120
100
80
60
40
20
0
01 2 3 45V 7
VGS
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 A 140
ID
Page 5
2003-05-09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPP100N08S2-07.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPP100N08S2-07 | OptiMOS Power-Transistor | Infineon Technologies |
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