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PDF HAF2012L Data sheet ( Hoja de datos )
| Número de pieza | HAF2012L | |
| Descripción | Silicon N Channel MOS FET Series Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF2012L (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G1139-0400
Rev.4.00
Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
1
2
3
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
D
1. Gate
2. Drain
3. Source
4. Drain
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 1 of 9
1 page  
HAF2012(L), HAF2012(S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
ID = 20 A
VGS = 4 V
10 A
5A
0.04
0.02
10 V
ID = 20 A
5 A, 10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.5 1
2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
5 10 20 50
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
VGS = 5 V
20
10
0V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
50 Pulse Test
20 Tc = –25°C
10
25°C
5
75°C
2
1
0.5 1 2
5 10 20
Drain Current ID (A)
50
Switching Characteristics
100
50 td(off)
tf
20
tr
10
td(on)
5
2
1
0.1 0.2
VGS = 5 V, VDD = 30 V
PW = 300 µs, duty ≤ 1 %
0.5 1 2 5 10 20 50
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Coss
30 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 5 of 9
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HAF2012L.PDF ] | |
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| HAF2012 | Silicon N Channel MOS FET Series Power Switching | Renesas Technology |
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| HAF2012S | Silicon N Channel MOS FET Series Power Switching | Renesas Technology |
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