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PDF IRHMJ58160 Data sheet ( Hoja de datos )
| Número de pieza | IRHMJ58160 | |
| Descripción | (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD-96916
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57160
100V, N-CHANNEL
5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMJ57160 100K Rads (Si)
IRHMJ53160 300K Rads (Si)
IRHMJ54160 600K Rads (Si)
IRHMJ58160 1000K Rads (Si)
RDS(on)
0.018Ω
0.018Ω
0.018Ω
0.019Ω
ID
35A*
35A*
35A*
35A*
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
35*
35*
140
250
2.0
±20
500
35
25
3.4
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (for 5s)
3.7 (Typical)
g
1
12/24/04
1 page  
Pre-Irradiation
IRHMJ57160
10000
8000
VCCGirsssSs
=
=
=
0V,
CCggsd
+
f = 1MHz
Cgd , Cds
SHORTED
Coss = Cds + Cgd
6000
4000
Ciss
Coss
2000
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 30 60 90 120 150 180
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5
VSD ,Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10µs
10 100µs
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
1ms
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHMJ58160.PDF ] | |
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