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IRHMJ53160 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHMJ53160
部品説明 (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHMJ53160 Datasheet, IRHMJ53160 PDF,ピン配置, 機能
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PD-96916
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57160
100V, N-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMJ57160 100K Rads (Si)
IRHMJ53160 300K Rads (Si)
IRHMJ54160 600K Rads (Si)
IRHMJ58160 1000K Rads (Si)
RDS(on)
0.018
0.018
0.018
0.019
ID
35A*
35A*
35A*
35A*
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
35*
35*
140
250
2.0
±20
500
35
25
3.4
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (for 5s)
3.7 (Typical)
g
1
12/24/04

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