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Número de pieza | IRHMJ4250 | |
Descripción | (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD-96914
IRHMJ7250
RADIATION HARDENED
200V, N-CHANNEL
POWER MOSFET
RAD Hard™ HEXFET® TECHNOLOGY
SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level
IRHMJ7250 100K Rads (Si)
IRHMJ3250 300K Rads (Si)
IRHMJ4250 600K Rads (Si)
IRHMJ8250 1000K Rads (Si)
RDS(on)
0.10Ω
0.10Ω
0.10Ω
0.10Ω
ID
26A
26A
26A
26A
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
TO-254AA Tabless
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
12/24/04
1 page Pores-tI-rIrraraddiaiatitoionn
IRHMJ7250
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
5 Page Pre-Irradiation
IRHMJ7250
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T.
IAS
0.01Ω
+
-
VDD
A
Fig 28a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 28b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 29a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRHMJ4250.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHMJ4250 | (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | International Rectifier |
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